Simulation and optimization of 2.6-2.8 µm GaSb-based VCSELs

摘要

We present the simulation results of threshold operation of mid-infrared GaSb-based vertical-cavity surface-emitting lasers (VCSELs) obtained with the use of comprehensive fully self-consistent optical-electrical-thermal-recombination numerical model. The results show that by a proper design of VCSEL structure and composition of the active region it is theoretically possible to achieve room-temperature (RT) threshold operation for wavelength of 2.8 µm which is about 0.2 µm longer than those reported so far in the literature for ITI-V VCSELs with type-I quantum wells. Calculated values of the RT threshold current were equal to 2.5 and 4.0 mA for tunnel-junction diameters of 2 and 4 urn, respectively.