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Effect of deposition time on structural and physical properties of Cu_2CdSnS_4 thin films prepared by spray pyrolysis technique: experimental and ab initio study

机译:沉积时间对喷雾热解法制备Cu_2CdSnS_4薄膜结构和物理性能的影响:实验和从头算

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摘要

Cu_2CdSnS_4 (CCdTS) thin films were synthesized using chemical spray pyrolysis deposition technique. The effect of various deposition times (20, 40, 60 min) on growth of these films was investigated. The as-synthesized Cu_2CdSnS_4 thin films were characterized by X-ray diffraction (XRD), ultraviolet-visible (UV-Vis) spectroscopy, Raman spec-troscopy and Hall Effect measurements. The XRD pattern of Cu_2CdSnS_4 structured in stannite phase with preferential orientations along (112) planes. Raman spectrum revealed very strong peak at about 333 cm~(-1). The films have the direct optical band gaps of 1.39-1.5 eV. The optimum hole mobility was found to be 3.212 × 10~1 cm~2 v~(-1) s~(-1) for the film deposited on 60 min. The electronic structure and optical properties of the stannite structure Cu_2CdSnS_4 were obtained by ab initio calculations using the Korringa-Kohn-Rostoker method combined with the Coherent Potential Approximation (CPA), as well as CPA confirms our results.
机译:采用化学喷雾热解沉积技术合成了Cu_2CdSnS_4(CCdTS)薄膜。研究了各种沉积时间(20、40、60分钟)对这些膜生长的影响。合成后的Cu_2CdSnS_4薄膜通过X射线衍射(XRD),紫外可见(UV-Vis)光谱,拉曼光谱和霍尔效应测量来表征。亚锡相结构的Cu_2CdSnS_4的XRD图谱具有沿(112)平面优先取向。拉曼光谱在约333 cm〜(-1)处显示出非常强的峰。薄膜的直接光学带隙为1.39-1.5 eV。发现在60分钟的沉积膜上,最佳空穴迁移率是3.212×10〜1 cm〜2 v〜(-1)s〜(-1)。通过使用Korringa-Kohn-Rostoker方法结合相干势近似(CPA)从头算来获得锡矿结构Cu_2CdSnS_4的电子结构和光学性质,并且CPA证实了我们的结果。

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