Langevin-like method for modelling the noise currents in HgCdTe barrier LWIR detectors

摘要

This paper presents the modeling of the spectral density of noise current in semiconductor structures. Basing on P. Handel's theory we have considered a wide range of sources of 1/f noise caused both by generation-recombination (G-R) and scattering processes. In addition to the shot G-R noise caused by different mechanism, the diffusion noise and temperature fluctuations are also included. Moreover, we have found the place where the noise current is mainly generated in HgCdTe barrier long wavelength detectors.