机译:退火温度对ZnO纳米棒光致发光和闪烁特性的影响
Ataturk University, Faculty of Science, Department of Physics, 25240 Erzurum, Turkey,Georgia Institute of Technology, Atlanta, GA 30332-0245, USA;
Georgia Institute of Technology, Atlanta, GA 30332-0245, USA;
Georgia Institute of Technology, Atlanta, GA 30332-0245, USA;
Georgia Institute of Technology, Atlanta, GA 30332-0245, USA;
Georgia Institute of Technology, Atlanta, GA 30332-0245, USA,PhosphorTech Corporation, 3645 Kennesaw North Industrial Parkway, GA 30144, USA;
ZnO; Nanorod synthesis; Annealing; Photoluminescence; Alpha particle response;
机译:退火,合成温度和结构对Eu掺杂ZnO纳米棒光致发光性能的影响
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机译:Pt封端和退火对ZnO纳米棒光致发光性能的影响
机译:通过在Si和Au / Si衬底上生长的催化浸渍法制备ZnO纳米棒表面形态和光致发光性能的退火
机译:退火温度对Sol-Gel ZnO薄膜力学性能的影响。
机译:水溶液低温退火对AZO衬底上ZnO纳米棒光学和形态性质的影响。
机译:多退火和化学浴沉积方法合成的ZnO纳米棒的光致发光性能的比较