...
机译:离子注入损伤的钨中等离子体注入氢扩散和俘获的模型开发
Center for Energy Research, University of California San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0417, USA;
Materials Science and Technology Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545, USA;
Center for Energy Research, University of California San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0417, USA;
Center for Energy Research, University of California San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0417, USA;
tritium retention; radiation damage; tungsten; diffusion modeling;
机译:通过等离子体注入的He纳米气泡在辐射损坏的钨中减少D捕获
机译:通过等离子体植入的D捕获的纳米杆菌在辐射损坏钨中减少
机译:用高能氢气和等离子体聚焦装置照射钨表面的辐射损伤
机译:为硅技术开发建模硅注入损伤和瞬态增强扩散效应
机译:离子束损坏的钨在等离子体中注入氘的扩散,俘获和同位素交换。
机译:等轴纳米晶钨和超细钨-TiC合金的原位氦注入和对氦气气泡损伤的辐射耐受性的TEM研究
机译:诸如诸如晶阈血浆植入下钨氘诱捕与运输的脱位机制
机译:高强度合金氢侵入扩散/捕集模型的评价