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Model development of plasma implanted hydrogenic diffusion and trapping in ion beam damaged tungsten

机译:离子注入损伤的钨中等离子体注入氢扩散和俘获的模型开发

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摘要

A Cu ion beam is used to induce controlled levels of damage (10~(-3), 10~(-2), and 10~(-1) dpa) in room temperature W samples. A single 5 MeV beam energy yielding a peaked damage profile 0.8 μm into the material, or three beam energies (0.5, 2, and 5 MeV) producing a relatively uniform damage profile from the near surface up to 0.8 μm were used. The W samples were then exposed to a D plasma ion fluence of 1024 ions m~(-1) at 380 K, and the resulting D retention was measured using the D(~3He,p)~4He reaction analysis (NRA) and thermal desorption spectroscopy (TDS). We observe that within experimental error there is no significant difference in retention whether the damage profile is peaked or uniform. The increase in retention is observed to increase proportional to dpa066 estimated from the dpa peak calculated from the SRIM program. A simplified retention model is proposed that provides concentration profiles that can be directly compared to NRA data and total retention measurements. Taking the trapping energies due to three defect types calculated from density functional theory (DFT), the only free-parameters are three defect densities of in-grain monovacancies, dislocations, and grain boundary vacancies, and we assume these defects to be the dominant trapping locations. The model can fit D retention data in a pristine W sample within the experimental error of the measurements, and in subsequent modeling these intrinsic defect densities are then fixed. We model the retention profile after ion damage by adding the SRIM predicted vacancy profile to the intrinsic monovacancy defect density. Since the increase in retention, and therefore the increase in vacancy production, does not increase linearly with dpa, a correction factor is multiplied to the predicted vacancy profile to fit the data. A new diffusion coefficient is calculated with the model that is a function of the concentration of trapped atoms. This calculation may resolve discrepancies of various diffusivity measurements and models in the literature.
机译:铜离子束可在室温W样品中引起受控水平的损伤(10〜(-3),10〜(-2)和10〜(-1)dpa)。使用单个5 MeV光束能量在材料中产生峰值损伤轮廓0.8μm,或使用三个光束能量(0.5、2和5 MeV)从近表面直至0.8μm产生相对均匀的损伤轮廓。然后将W样品在380 K下暴露于1024个离子m〜(-1)的D等离子体离子通量中,并使用D(〜3He,p)〜4He反应分析(NRA)和热解吸光谱法(TDS)。我们观察到在实验误差范围内,无论损伤分布是峰值还是均匀,保留率均无显着差异。观察到保留量的增加与从SRIM程序计算的dpa峰估算的dpa066成正比。提出了一种简化的保留模型,该模型提供了可以与NRA数据和总保留量测量值直接比较的浓度曲线。考虑到根据密度泛函理论(DFT)计算出的三种缺陷类型所产生的俘获能,唯一的自由参数是晶粒单空位,位错和晶界空位的三种缺陷密度,我们假设这些缺陷是主要的俘获位置。该模型可以在测量的实验误差内拟合原始W样品中的D保留数据,然后在随后的建模中固定这些固有缺陷密度。我们通过将SRIM预测的空位分布图添加到固有的单空位缺陷密度中,对离子损伤后的保留曲线进行建模。由于保留率的增加(以及空位产量的增加)不会随dpa线性增加,因此将校正因子乘以预测的空位分布以拟合数据。使用该模型计算新的扩散系数,该系数是被俘获原子浓度的函数。该计算可以解决文献中各种扩散率测量值和模型的差异。

著录项

  • 来源
    《Nuclear fusion》 |2016年第10期|106030.1-106030.17|共17页
  • 作者单位

    Center for Energy Research, University of California San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0417, USA;

    Materials Science and Technology Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545, USA;

    Center for Energy Research, University of California San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0417, USA;

    Center for Energy Research, University of California San Diego, 9500 Gilman Drive, La Jolla, CA 92093-0417, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    tritium retention; radiation damage; tungsten; diffusion modeling;

    机译:retention保留辐射损伤;钨扩散建模;

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