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机译:高通量暴露于高通量等离子体的多晶钨的氘俘获和表面改性
Max-Planck-Institut fur Plasmaphysik, Boltzmannstraβe 2, D-85748 Garching, Germany,DIFFER-Dutch Institute for Fundamental Energy Research, De Zaale 20,5612 AJ Eindhoven, the Netherlands,Department of Applied Physics, Ghent University, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium,Physik-Department E28, Technische Universität München, James-Franck-Straβe 1, D-85748 Garching, Germany,National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, 115409 Moscow, Russian Federation;
Max-Planck-Institut fur Plasmaphysik, Boltzmannstraβe 2, D-85748 Garching, Germany;
DIFFER-Dutch Institute for Fundamental Energy Research, De Zaale 20,5612 AJ Eindhoven, the Netherlands;
Max-Planck-Institut fur Plasmaphysik, Boltzmannstraβe 2, D-85748 Garching, Germany;
tungsten; deuterium retention; surface modifications; blistering; high fluences;
机译:高通量氘等离子体暴露的钨和钨钽合金的表面改性及其对氘保留的影响
机译:低能,高通量D等离子体暴露的ITER级多晶钨中表面形态和氘保留的温度依赖性
机译:表面改性和氘保留在低能量,高通量纯净和氦气氘等离子体暴露于低能量钢中的抑制钢
机译:钨和钼暴露于低能量,高通量氘质等离子体的表面改性和氘保留
机译:离子束损坏的钨在等离子体中注入氘的扩散,俘获和同位素交换。
机译:暴露于低能氦等离子体的硅和锗表面的纳米级改性
机译:在高分流速下暴露于高通量血浆的多晶钨的氘俘获和表面改性