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Application of high frequency biasing and its effect in STOR-M tokamak

机译:高频偏置的应用及其效果在Stor-M Tokamak中

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A pulsed oscillating power amplifier has been developed to apply high frequency biasing voltage to an electrode at the edge of the STOR-M tokamak plasma. The power amplifier can deliver a peak-to-peak oscillating voltage ±60 Ⅴ and current 30 A within the frequency range 1 kHz-50 kHz. The electrode is located in the equatorial plane at radius p = 0.88. The frequency of the applied voltage has been varied between discharges. It is observed that the plasma density and soft x-ray intensity from the plasma core region usually increase at lower frequency regime 1 kHz-5 kHz as well as relatively higher frequency regime 20 kHz-25 kHz but seldom increase in between them. Increment of τ_E has been observed 40% and 20% for the frequency regimes of 1 kHz-5 kHz and 20 kHz-25 kHz, respectively, and τ_p increment is 25% for both frequency regimes. Transport simulation has been carried out using the ASTRA simulation code for STOR-M tokamak parameters to understand the physical process behind experimental observations at the higher frequency branch. The model is based on geodesic acoustic mode(GAM) excitement at resonance frequency associated with Ware-pinch due to the oscillating electric field produced by biasing voltage, which can suppress anomalous transport. Simulation results reproduce the experimental trends quite well in terms of the density, particle confinement, as well as energy confinement time evolution. All the results indicate that high frequency biasing is capable of improving confinement efficiently.
机译:已经开发了一种脉冲振荡功率放大器,以将高频偏置电压施加到Stor-M Tokamak等离子体边缘处的电极。功率放大器可以在1kHz-50kHz的频率范围内提供峰值到峰值振荡电压±60÷和电流30a。电极以半径P = 0.88位于赤道平面中。施加电压的频率在放电之间变化。观察到,来自等离子体芯区域的等离子体密度和软X射线强度通常在较低频率调节1kHz-5kHz下增加,以及相对较高的频率制度20kHz-25kHz,但它们之间很少增加。 τ_e的增量已经观察到1kHz-5kHz和20kHz-25kHz的频率调节的40%和20%,并且频率制度的τp增量为25%。已经使用ASTRA模拟代码进行了运输仿真,以了解较高频率分支的实验观测背后的物理过程。由于通过偏置电压产生的振荡电场,该模型基于与储物频率相关的谐振频率的谐振频率,这可以抑制异常传输。仿真结果在密度,粒子限制以及能量限制时间进化方面相当良好地再现了实验趋势。所有结果表明,高频偏置能够有效地改善限制。

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