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机译:表面熔化对纯镧掺杂的钨中氘保留的影响
Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100191, Peoples R China;
Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100191, Peoples R China;
Chinese Acad Sci, Lanzhou Inst Chem Phys, Lanzhou 730000, Gansu, Peoples R China|Max Planck Inst Plasma Phys, Boltzmannstr 2, D-85748 Garching, Germany;
Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China;
Tsinghua Univ, Sch Mat Sci & Engn, Beijing 100084, Peoples R China;
Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Anhui, Peoples R China;
Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100191, Peoples R China;
Beihang Univ, Sch Phys & Nucl Energy Engn, Beijing 100191, Peoples R China;
tungsten; lanthanum oxide; melting; microstructure; deuterium retention;
机译:纯和ZRC掺杂钨中的表面起泡和氘保留行为暴露于氘血浆
机译:氘植入到Y2O3掺杂和纯钨中:氘保留和起泡行为
机译:钨和掺杂镧的氧化钨暴露于重氘等离子体发射中的损伤比较
机译:高通氘10-100 eV等离子体照射钨氘保留的影响
机译:纯氮掺杂的纳米氧化钨薄膜的结构和电子性能。
机译:Ho3 + / Tm3 +共掺杂镧钨锗碲玻璃纤维的制备及其2.0μm激光性能
机译:氘注入Y 2 sub> O 3 sub>掺杂和纯钨:氘保留和起泡行为