...
机译:通过将直接计算与分析相比较,证明在形成Ti / p-Si肖特基结的同时存在一种合适的氧化物相
Department of Physics, Payame Noor University, Tehran, Iran;
Department of Physics Department, Islamic Azad University, Karaj Branch, Karaj, Iran;
Department of Physics, Payame Noor University, Tehran, Iran;
Department of Physics, Faculty of Science, Islamic Azad University, Karaj Branch, Karaj, Iran;
Department of Electronics Engineering, Science and Research University, Tehran, Iran;
Department of Chemistry, University of Isfahan, Isfahan, Iran;
Oxide phase; Schottky diode; Series resistance; Titanium layer;
机译:高温肖特基结界面性能:Agnws嵌入金属氧化物/ P-Si的情况
机译:通过热氧化制备具有界面层的Ti / p-Si肖特基势垒二极管
机译:用于太阳能电池的Cr / n-BaSi2肖特基结和n-BaSi2 / p-Si异质结二极管的电性能分析
机译:十米级肖特基势垒金属氧化物半导体场效应晶体管的快速热退火技术形成Formation硅化源漏结。
机译:组成和暴露时间对二元Ti-x系统的氧化行为和同时发生的氧诱导相变的影响的组合评估。
机译:二氧化硅的定向气相形成及其对星际硅酸盐形成的影响
机译:用于太阳能电池的Cr / n-BaSi2肖特基结和n-BaSi2 / p-Si异质结二极管的电性能分析