...
首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >A 10–40 GHz Broadband Subharmonic Monolithic Mixer in 0.18 $mu$ m CMOS Technology
【24h】

A 10–40 GHz Broadband Subharmonic Monolithic Mixer in 0.18 $mu$ m CMOS Technology

机译:采用0.18 $ mu $ m CMOS技术的10-40 GHz宽带亚谐波单片混频器

获取原文
获取原文并翻译 | 示例
           

摘要

ara> A 10–40 GHz broadband subharmonic monolithic passive mixer using the standard 0.18 $mu$ m CMOS process is demonstrated. The proposed mixer is composed of a two-stage Wilkinson power combiner, a short stub and a low-pass filter. Likewise, the mixer utilizes a pair of anti-parallel gate-drain-connected diodes to achieve subharmonic mixing mechanism. The two-stage Wilkinson power combiner is used to excite a radio frequency (RF) and local oscillation (LO) signals into diodes and to perform broadband operation. The low-pass filter supports an IF frequency range from dc to 2.5 GHz. This proposed configuration leads to a die size of less than 1.1$,times,$ 0.67 mm$^{2}$ . The measured results demonstrate a conversion loss of 15.6–17.6 dB, an LO-to-RF isolation better than 12 dB, a high 2LO-to-RF isolation of 51–59 dB over 10–40 GHz RF bandwidth, and a 1 dB compression power of 8 dBm.
机译:ara>演示了使用标准的0.18 CMOS工艺的10–40 GHz宽带亚谐波单片无源混频器。拟议的混频器由两级威尔金森功率合成器,短截线和低通滤波器组成。同样,混频器利用一对反并联的栅极-漏极连接的二极管来实现次谐波混频机制。两级Wilkinson功率组合器用于将射频(RF)和本地振荡(LO)信号激励到二极管中并执行宽带操作。低通滤波器支持从dc到2.5 GHz的IF频率范围。此提议的配置导致管芯尺寸小于1.1 $,times,$ 0.67 mm $ ^ {2} $ 。测量结果表明,转换损耗为15.6–17.6 dB,LO至RF隔离度优于12 dB,在10–40 GHz RF带宽上2LO至RF的高隔离度为51–59 dB,1 dB压缩功率为8 dBm。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号