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首页> 外文期刊>Journal of Microelectromechanical Systems >Fabrication of Phase Change Microstring Resonators via Top Down Lithographic Techniques: Incorporation of VO
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Fabrication of Phase Change Microstring Resonators via Top Down Lithographic Techniques: Incorporation of VO

机译:通过自上而下的光刻技术制造相变微弦谐振器:合并VO

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The electronic, optical, and mechanical properties of vanadium dioxide (VO2) can be significantly altered by external stimuli such as heat, electric field, and so on, due to its metal-insulator transition (MIT). While the properties and potential applications of this material have been widely studied, minimal efforts were pursued to integrate VO2 into existing microfabrication processes. Here, in this paper, we present a process for fabricating VO2/TiO2-coated microstring resonators, where the stability of both films was monitored during the entire process. RIE, vapour HF, ablation, and ICP etching were used throughout the process and their effects on the VO2/TiO2 films, as well as the structural and masking layers was studied. Certain processes required the use of a metal hard mask rather than photo resist. VO2 shows excellent etch selectivity over the metal mask layer with RIE. Of all metals examined, Cr was found to be the most stable as a hard mask. Once fabricated, the mechanical and electrical characterizations of the microstring were carried out by measuring resonance frequency (f(r)) and electrical resistance which show over 6 % alteration in f(r) and two orders of magnitude change in resistance during the MIT, with a reversible transition and minimal hysteresis. This report provides a foundation for future processing of VO2 based MEMS/MOEMS devices.
机译:由于其金属-绝缘体转变(MIT),二氧化钒(VO2)的电子,光学和机械性能会因外部刺激(例如热,电场等)而发生显着变化。尽管已对该材料的性能和潜在应用进行了广泛研究,但已进行了最小的努力来将VO2集成到现有的微加工工艺中。在这里,在本文中,我们提出了一种制造VO2 / TiO2涂层的微串谐振器的方法,其中在整个过程中都对两层膜的稳定性进行了监测。在整个过程中都使用了RIE,蒸气HF,烧蚀和ICP蚀刻,并研究了它们对VO2 / TiO2膜以及结构层和掩膜层的影响。某些过程需要使用金属硬掩模而不是光刻胶。 VO2在具有RIE的金属掩模层上显示出极好的蚀刻选择性。在所有检查过的金属中,发现Cr是最稳定的硬掩模。制作完成后,可通过测量共振频率(f(r))和电阻来显示微弦的机械和电气特性,这些共振频率显示出MIT期间f(r)的变化超过6%,并且电阻变化了两个数量级,具有可逆的过渡和最小的磁滞。该报告为将来基于VO2的MEMS / MOEMS器件的处理奠定了基础。

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