Effective Schottky barrier lowering of Ni silicide/p-Si(100) using an ytterbium confinement structure for high performance n-type MOSFETs

摘要

A simple but effective rare earth metal (RE) confinement structure is demonstrated to suppress surface accumulation of Yb generally encountered in the RE metal incorporated Ni silicide system. The confinement structure is realized by inserting a Ti diffusion barrier layer between Yb and Ni layers. Yb atoms can be constrained in a specified reaction region during silicidation as evidenced by Auger electron spectroscopy and cross-section transmission electron microscopy analysis. The RE metal confinement structure provides a complementary metal-oxide-semiconductor compatible approach for further Schottky barrier height engineering and is a promising method for future technology nodes. (C) 2016 Elsevier Ltd. All rights reserved.