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首页> 外文期刊>IEEE Transactions on Circuits and Systems. II, Analog and Digital Signal Processing >An Output Buffer for 3.3-V Applications in a 0.13-$muhbox{m}$ 1/2.5-V CMOS Process
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An Output Buffer for 3.3-V Applications in a 0.13-$muhbox{m}$ 1/2.5-V CMOS Process

机译:0.13- $ muhbox {m} $ 1 / 2.5-V CMOS工艺中用于3.3V应用的输出缓冲器

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摘要

With a 3.3-V interface, such as PCI-X application, high-voltage overstress on the gate oxide is a serious reliability problem in designing I/O circuits by using only 1/2.5-V low-voltage devices in a 0.13-mum CMOS process. Thus, a new output buffer realized with low-voltage (1- and 2.5-V) devices to drive high-voltage signals for 3.3-V applications is proposed in this paper. The proposed output buffer has been fabricated in a 0.13-mum 1/2.5-V 1P8M CMOS process with Cu interconnects. The experimental results have confirmed that the proposed output buffer can be successfully operated at 133 MHz without suffering high-voltage gate-oxide overstress in the 3.3-V interface. In addition, a new level converter that is realized with only 1- and 2.5-V devices that can convert 0/1-V voltage swing to 1/3.3-V voltage swing is also presented in this paper. The experimental results have also confirmed that the proposed level converter can be operated correctly
机译:对于3.3-V接口(例如PCI-X应用),在设计I / O电路时,仅使用0.13-μm的1 / 2.5-V低压器件,栅极氧化层上的高压过应力便成为严重的可靠性问题。 CMOS工艺。因此,本文提出了一种新的输出缓冲器,该器件通过低压(1-V和2.5V)器件实现,以驱动3.3V应用中的高压信号。拟议的输出缓冲器是采用0.13微米1 / 2.5-V 1P8M CMOS工艺制造的,具有Cu互连。实验结果证实,所建议的输出缓冲器可以在133 MHz的频率下成功运行,而不会在3.3 V接口中遭受高压栅极氧化物过应力。此外,本文还介绍了一种新型的电平转换器,该转换器仅用1-V和2.5V器件实现,可以将0 / 1V电压摆幅转换为1 / 3.3V电压摆幅。实验结果也证实了所提出的电平转换器可以正确运行

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