Crystallisation and Tetragonal-monoclinic Transformation in ZrO_2 and HfO_2 Dielectric Thin Films

摘要

The crystallisation and the tetragonal-to-monoclinic phase transformation in ZrO_2 and HfO_2 thin films prepared by atomic layer chemical vapour deposition (ALCVD) are studied using high-temperature grazing-incidence X-ray diffraction (HT-XRD). These films are developed for applications as high-k dielectric gate in CMOS transistors. HT-XRD shows that all the tested samples have a crystallisation onset temperature below 600 deg. C. the crystallisation onset temperature depends not only on the material, but also on the film thickness.