Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting

摘要

We report stable and high performance amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) by using bulk-accumulation (BA) and split active/source/drain layers. The a-IGZO TFTs exhibit the mobility over 80 cm(2)/Vs and extremely stable under bias and mechanical stresses. We demonstrated a 4-inch semitransparent AMOLED using the oxide TFT backplane with the gate driver integrated.