The new route for realization of 1-μm-pixel-pitch high-resolution displays

摘要

A new pixel structure for the realization of a 1-mu m-pixel-pitch display was developed. This structure, named vertically stacked thin-film transistor (VST), was based on the conventional back-channel etched thin-film transistor (TFT), but all the layers except the horizontal gate line were vertically stacked on the embedded data line, enabling the implementation of high-resolution display panels. The VST device with a channel length of 1 mu m showed a high field effect mobility of more than 50 cm(2)/Vs and low subthreshold slope of 78 mV per decade. It also shows a high uniform electrical characteristic over the entire 6-in. wafer. The development of a new pixel architecture is expected to enable the implementation of 1-mu m-pixel-pitch high-resolution displays such as spatial light modulators for digital holograms.