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首页> 外文期刊>Journal of intelligent material systems and structures >Penny-shaped cracks in three-dimensional piezoelectric semiconductors via Green's functions of extended displacement discontinuity
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Penny-shaped cracks in three-dimensional piezoelectric semiconductors via Green's functions of extended displacement discontinuity

机译:基于格林位移位移不连续性函数的三维压电半导体中的竹enny形裂纹

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摘要

In this article, a penny-shaped crack in the isotropic plane of three-dimensional transversely isotropic piezoelectric semiconductors is analyzed via the displacement discontinuity boundary element method. The general solutions are derived based on the generalized Almansi's theorem and the operator theory. Green's functions are derived using the Hankel transformation under uniformly distributed extended displacement discontinuities (including displacement discontinuities, potential discontinuity, and electron density discontinuity) on a penny-shaped crack in the isotropic plane of three-dimensional transversely isotropic piezoelectric semiconductors. Using the extended displacement discontinuity boundary element method, penny-shaped cracks in transversely isotropic plane of three-dimensional piezoelectric semiconductors are studied, and the stress, electric displacement, and electric current intensity factors under uniform mechanical-electric-current loads applied on the penny-shaped crack surface are calculated. The fracture behaviors of piezoelectric semiconductors are studied.
机译:本文通过位移不连续边界元方法分析了三维横向各向同性压电半导体各向同性平面上的一个便士形裂纹。通用解是根据广义Almansi定理和算子理论得出的。 Green函数是使用Hankel变换在三维横向各向同性压电半导体的各向同性平面内的便士形裂纹上均匀分布的扩展位移不连续性(包括位移不连续,电势不连续和电子密度不连续)下得出的。使用扩展位移不连续边界元方法,研究了三维压电半导体的横向各向同性平面中的便士形裂纹,并在便士上施加了均匀的机械-电流负载下的应力,电位移和电流强度因子计算出裂纹形表面。研究了压电半导体的断裂行为。

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  • 作者单位

    Shanghai Univ, Mat Genome Inst, Shanghai, Peoples R China;

    Zhengzhou Univ, Henan Key Engn Lab Antifatigue Mfg Technol, 100 Sci Ave, Zhengzhou 450001, Henan Province, Peoples R China|Zhengzhou Univ, Sch Mech Engn, 100 Sci Ave, Zhengzhou 450001, Henan Province, Peoples R China;

    Zhengzhou Univ, Henan Key Engn Lab Antifatigue Mfg Technol, 100 Sci Ave, Zhengzhou 450001, Henan Province, Peoples R China|Zhengzhou Univ, Sch Mech Engn, 100 Sci Ave, Zhengzhou 450001, Henan Province, Peoples R China;

    Zhengzhou Univ, Henan Key Engn Lab Antifatigue Mfg Technol, 100 Sci Ave, Zhengzhou 450001, Henan Province, Peoples R China|Zhengzhou Univ, Sch Mech Engn, 100 Sci Ave, Zhengzhou 450001, Henan Province, Peoples R China|Univ Akron, Dept Civil Engn, Akron, OH 44325 USA;

    Zhengzhou Univ, Henan Key Engn Lab Antifatigue Mfg Technol, 100 Sci Ave, Zhengzhou 450001, Henan Province, Peoples R China|Zhengzhou Univ, Sch Mech Engn, 100 Sci Ave, Zhengzhou 450001, Henan Province, Peoples R China;

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  • 正文语种 eng
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  • 关键词

    piezoelectric semiconductor; Green's function; extended displacement discontinuity boundary element method; penny-shaped crack; extended stress intensity factor;

    机译:压电半导体;格林函数;扩展位移不连续边界元法;竹节状裂纹;扩展应力强度因子;

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