Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approach

摘要

We compute small-signal and noise quantities of nMOSFETs with different channel lengths with a fully self-consistent and deterministic Poisson, Schrodinger, and Boltzmann equation solver. We show how noise qualitatively changes due to short-channel effects and how noise is generated in the domain of ballistic transport. Furthermore, we inspect the suppression of noise due to the Pauli principle and due to the coupling to the fluctuations of the potential.