Analog and RF performance of doping-less tunnel FETs with Si0.55Ge0.45 source

摘要

This paper reports studies of a doping-less tunnel field-effect transistor (TFET) with a Si0.55Ge0.45 source structure aimed at improving the performance of charge-plasma-based doping-less TFETs. The proposed device achieves an improved ON-state current ( ION similar to 4.88 x 10(-5) A/mu m), an I-ON/I-OFF ratio of 6.91 x 10(12), an average subthreshold slope (AV-SS) of similar to 64.79mV/dec, and a point subthreshold slope (SS) of 14.95 mV/dec. This paper compares the analog and radio of frequency (RF) parameters of this device with those of a conventional doping-less TFET (DLTFET), including the transconductance (gm), transconductance-to-drain-current ratio (g(m)/I-D), output conductance (g(d)), intrinsic gain (A(V)), early voltage (VEA), total gate capacitance (C-gg), and unity-gain frequency (fT). Based on the simulated results, the Si0.55Ge0.45-source DLTFET is found to offer superior analog as well as RF performance.