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Performance analysis of multilayer graphene nanoribbon (MLGNR) interconnects

机译:多层石墨烯纳米带(MLGNR)互连的性能分析

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This paper addresses the impact of interlayer resistance due to c-axis resistivity and contact resistance on performance in terms of delay, power dissipation and power delay product (PDP) of Multi-layer graphene nanoribbon (MLGNR) interconnect. The impact of model parameter i.e. Fermi energy on performance of MLGNR is also discussed. A similar analysis is performed for copper interconnect and results are compared with MLGNR at 22 nm technology node. The impact of interlayer resistance on equivalent resistance of MLGNR is critically analyzed. Inductive and capacitive coupling between the adjacent layers are included in this analysis. It is found that the MLGNR with interlayer resistance, compared to copper, gives better performance in terms of delay, power dissipation and PDP with higher value of Fermi energy for semi global to global lengths of interconnect (300-1000 whereas reverse is true for local lengths 100-200 . In addition, performance gap between MLGNR with and without interlayer resistance decreases with increase in Fermi energy.
机译:本文从多层石墨烯纳米带(MLGNR)互连的延迟,功耗和功率延迟乘积(PDP)方面,探讨了由于c轴电阻率和接触电阻引起的层间电阻对性能的影响。还讨论了模型参数即费米能量对MLGNR性能的影响。对铜互连进行了类似的分析,并将结果与​​22 nm技术节点处的MLGNR进行了比较。严格分析了层间电阻对MLGNR等效电阻的影响。该分析包括相邻层之间的电感耦合和电容耦合。发现与铜相比,具有层间电阻的MLGNR在延迟,功耗和PDP方面表现出更好的性能,对于半全局到全局互连长度(300-1000,反之亦然),费米能量值更高。长度为100-200。另外,随着费米能量的增加,带和不带层间电阻的MLGNR之间的性能差距也会减小。

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