Impact of post deposition annealing in the electrically active traps at the interface between Ge(001) substrates and LaGeO_x films grown by molecular beam deoosition

摘要

Changes in the electron trapping at the interface between Ge substrates and LaGeO_x films grown by atomic O assisted molecular beam deposition are inferred upon post deposition annealing treatment on the as-deposited films from electrically detected magnetic resonance (EDMR) spectroscopy and from the electrical response of Pt/LaGeO_x/Ge metal oxide semiconductor (MOS) capacitors. The improved electrical performance of the MOS capacitors upon annealing is consistent with the EDMR detected reduction of oxide defects which are associated with GeO species in the LaGeO_x layer as evidenced by x-ray photoelectron spectroscopy.