Successful Growth of Conductive Highly Crystalline Sn-Doped α-Ga_2O_3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition

摘要

Highly crystalline a-phase gallium oxide (Ga_2O_3) thin films were grown by fine-channel mist chemical vapor deposition on c-sapphire substrates at 400 ℃ at a deposition rate of more than 20 nm/min. The thin films were doped with Sn(IV) atoms, which were obtained from Sn(II) chloride by the reaction SnCl_2 + H_2O_2 + 2HCl → SnCl_4 + 2H_2O. Conductive α-phase Ga_2O_3 thin films were successfully grown from source solutions containing less than 10 at. % Sn(IV). The source solution containing 4 at. % Sn(IV) resulted in obtaining a thin film with an n-type conductivity as high as 0.28 S cm~(-1), a mobility of 0.23cm~2 V~(-1) s~(-1), a carrier concentration of 7 × 10~(18)cm~(-3), and a full width at half maximum (FWHM) of the (0006) reflection X-ray rocking curve as low as 64arcsec.