Topographic analysis of the surface of the GaSbaOE (c) Mn > magnetic semiconductor

摘要

We have studied the formation of magnetic properties on the impurity-dislocation magnetism principle in a sample of a manganese-doped gallium antimonide compound semiconductor prepared by melt quenching. It has been shown using X-ray diffraction, optical microscopy, and scanning electron microscopy that the generation of dislocations and their motion during quenching play a key role in determining the microstructure of the GaSbaOE (c) Mn > magnetic semiconductor.