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Growth of epitaxial Cd1-x Mn (x) Te films

机译:外延Cd1-x Mn(x)Te膜的生长

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摘要

We have studied the growth and structure of epitaxial films of Cd1-x Mn (x) (x = 0.03) diluted magnetic solid solutions grown on mica substrates by molecular beam epitaxy and identified conditions for producing n- and p-type epitaxial films. Using an additional Te vapor source and optimizing the substrate temperature in the growth process, we were able to obtain structurally perfect p-type Cd1-x Mn (x) Te (x = 0.03) films with clean, smooth surfaces. The growth plane of the films on the mica substrates is (111) of a face-centered cubic lattice and their unit-cell parameter is D degrees = 6.477 .
机译:我们已经研究了通过分子束外延在云母衬底上生长的Cd1-x Mn(x)(x = 0.03)稀磁性固溶体外延膜的生长和结构,并确定了生产n型和p型外延膜的条件。使用附加的Te蒸气源并在生长过程中优化衬底温度,我们能够获得结构完美的p型Cd1-x Mn(x)Te(x = 0.03)膜,表面清洁,光滑。云母基板上的薄膜的生长平面为面心立方晶格的(111),其晶胞参数为D度= 6.477。

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