Position sensitivity characteristics of n-CdSe epitaxial layers grown on mica crystals in a quasi-closed system

摘要

Photosensitive epitaxial n-CdSe layers with high structural perfection have been grown on mica (muscovite) crystals in a quasi-closed system. We have studied polar diagrams of sensitivity for the epitaxial n-CdSe layers on mica as four-contact position-sensitive semiconductor photodetectors. Position sensitivity characteristics of the epitaxial n-CdSe layers on mica have been determined.