Computer Aided Simulation Tools for the Analysis of Semiconductor Lasers

摘要

The computer aided simulation tools have been developed for the analysis and optimisation of various physical parameters of the semiconductor lasers. For computer analysis, Poisson's equation and current continuity equations have been numerically solved iteratively to obtain electrostatic potential and quasi-Fermi potentials at various positions in the device structure respectively. The wave equation has been solved to obtain the optical field for the transverse electric mode and the rate equation for photons has been solved to obtain photon density. The operational mechanism of the device is fully understood using this tool by graphical representation of output characteristics. The current flow in the device is restricted to less distribution width due to self focusing effect for greater magnitude of current or operating voltage. The peak value of optical intensity value for 807 nanometer exactly lies at the centre of the active region, which confirms the optical confinement.