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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Thickness measurement of a thin-film layer on an anisotropic substrate by phase-sensitive acoustic microscope
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Thickness measurement of a thin-film layer on an anisotropic substrate by phase-sensitive acoustic microscope

机译:用相敏声显微镜测量各向异性基板上薄膜层的厚度

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Complex V(z) curves for single thin-film layers on anisotropic substrates are studied both experimentally and theoretically, and the application of V(z) measurement to the determination of film thickness on anisotropic substrates is discussed. Complex V(z) curves for aluminum layers (with thicknesses between 0.5 and 2 mu m) on a silicon wafer have been calculated. The inverse Fourier transform of the V(z) curves, which corresponds to the reflection coefficient, shows sharp changes at critical angles of pseudosurface waves, pseudo-Sezawa waves, and Rayleigh surface waves. These critical angles strongly depend on the thickness. Complex V(z) curves for these specimens have been measured using a phase-sensitive acoustic microscope with a point focus lens at 400 MHz. The critical angles of the surface waves obtained from the measured V(z) curves are in good agreement with those obtained from the calculated V(z) curves. On the basis of this result, it is shown that the V(z) measurement is applicable to the determination of film thickness on an anisotropic substrate.
机译:通过实验和理论研究了单个薄膜在各向异性衬底上的复数V(z)曲线,并讨论了V(z)测量在确定各向异性衬底上的膜厚中的应用。已经计算出硅晶片上铝层(厚度在0.5和2μm之间)的复数V(z)曲线。 V(z)曲线的傅立叶逆变换对应于反射系数,在伪面波,伪Sezawa波和瑞利面波的临界角处显示出急剧的变化。这些临界角在很大程度上取决于厚度。这些样品的复数V(z)曲线已使用具有点聚焦透镜的相敏声显微镜在400 MHz下进行了测量。从测量的V(z)曲线获得的表面波的临界角与从计算的V(z)曲线获得的临界角非常吻合。基于该结果,表明V(z)测量可用于确定各向异性基板上的膜厚度。

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