Transient modeling of ferroelectric capacitors for nonvolatilememories

摘要

Present ferroelectric (FE) capacitor models mostly rely onncontinuous hysteresis loop characteristics of FE materials. Ournexperimental results show that this approach overestimates the remanentnand saturation polarizations available for nonvolatile semiconductornmemories by more than 50%. A behavioral transient model based on pulsenmeasurement results is proposed and implemented as an HSPICEnmacro-model. The model mainly consists of two nonlinear capacitors,ncorresponding to the two different polarization states of an FEncapacitor