Effect of germanium doping on pyroelectric and piezoelectricproperties of Sn2P2S6 single crystal

摘要

The results of the search for dopants to optimize thenferroelectric phase transition temperature and pyroelectric andnpiezoelectric properties of Sn2P2S6ncrystals are reported. Among all dopants only germanium causes anpronounced shift of the phase transition toward higher temperatures. Thenhighest Curie temperature achieved by Ge doping is as high as 88°C.nThe major advantage of the Ge-doped crystals as compared to purenSn2P2S6 is that the hydrostaticnpiezoelectric and pyroelectric response is kept high in a widerntemperature range with much lower temperature dependence. The effects ofnthe doping on pyroelectric and piezoelectric properties, characterizingnthe sensitivity of the material to thermal and hydroacoustic excitation,nare discussed