An application of polarized domains in ferroelectric thin filmsusing scanning probe microscope

摘要

The feasibility of utilizing PZT films as future data storagenmedia was investigated using a modified AFM. Applying voltages between anconductive AFM tip and the PZT films causes the switching ofnferroelectric domains. The domains are observed using an EFM imagingntechnique. The experimental results and calculations revealed that thenelectrostatic force generated between the polarized area and the tip isna main contributor for the imaging of the polarized domains. The writtennfeatures on ferroelectric films were less than 100 nm in diameter,nimplying the possibility of realizing data storage devices withnultra-high area density. The disappearance of the polarized imagesnwithout any applied voltage was observed, which is a drawback in thisnapplication of PZT thin films