Optimization of an ultra low-phase noise sapphire-SiGe HBT oscillator using nonlinear CAD

摘要

In this paper, the electrical and noise performances of a 0.8 Μm silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded QL factor of 75,000.