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A finite difference model For cMUT devices

机译:cMUT设备的有限差分模型

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摘要

A finite difference method was implemented to simulate capacitive micromachined ultrasonic transducers (cMUTs) and compared to models described in the literature such as finite element methods. Similar results were obtained. It was found that one master curve described the clamped capacitance. We introduced normalized capacitance versus normalized bias voltage and metallization rate, independent of layer thickness, gap height, and size membrane, leading to the determination of a coupling factor master curve. We present here calculations and measurements of electrical impedance for cMUTs. An electromechanical equivalent circuit was used to perform simulations. Our experimental measurements confirmed the theoretical results in terms of resonance, anti-resonance frequencies, clamped capacitance, and electromechanical coupling factor. Due to inhomogeneity of the tested element array and strong parasitic capacitance between cells, the maximum coupling coefficient value achieved was 0.27. Good agreement with theory was obtained for all findings.
机译:实现了一种有限差分方法来模拟电容微机械超声换能器(cMUT),并将其与文献中描述的模型(例如有限元方法)进行比较。获得了相似的结果。发现一条主曲线描述了钳位电容。我们介绍了归一化电容与归一化偏置电压及金属化速率的关系,与层厚度,间隙高度和膜尺寸无关,从而确定了耦合因子主曲线。我们在这里介绍cMUT的电阻抗的计算和测量。机电等效电路用于执行仿真。我们的实验测量结果在共振,反共振频率,钳位电容和机电耦合因子方面证实了理论结果。由于被测元件阵列的不均匀性以及单元之间的强大寄生电容,因此实现的最大耦合系数值为0.27。所有发现均与理论相符。

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