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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Surface acoustic wave properties of proton-exchanged LiNbO/sub 3/ waveguides with SiO/sub 2/ film
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Surface acoustic wave properties of proton-exchanged LiNbO/sub 3/ waveguides with SiO/sub 2/ film

机译:具有SiO / sub 2 /膜的质子交换LiNbO / sub 3 /波导的表面声​​波特性

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Surface acoustic wave (SAW) properties of proton-exchanged (PE) z-cut lithium niobate (LiNbO/sub 3/) waveguides with silicon dioxide (SiO/sub 2/) film layers were investigated using octanoic acid. The distribution of hydrogen measured by secondary ion mass spectrometry (SIMS) showed a step-like profile, which was assumed to be equal to the waveguide depth (d). The SiO/sub 2/ film was deposited on z-cut LiNbO/sub 3/ waveguide by radio frequency (rf) magnetron sputtering. We investigated the important parameters for the design of SAW devices such as phase velocity (V/sub p/), insertion loss (IL) and temperature coefficient of frequency (TCF) by a network analyzer using thin-film aluminum interdigital transducer electrodes on the upper SiO/sub 2/ film surface. The experimental results showed that the V/sub p/ of SAW decreased slightly with the increase of h//spl lambda/, where h was the thickness of SiO/sub 2/ films and /spl lambda/ was the wavelength. The IL of SAW increased with increased h//spl lambda/. The TCF of SAW calculated from the frequency change of the output of SAW delay line showed an evident decrease with the increase of h//spl lambda/. The TCF for PE z-cut LiNbO/sub 3/ was measured to be about -54.72 ppm//spl deg/C at h//spl lambda/ = 0.08. It revealed that the SiO/sub 2/ films could compensate and improve the temperature stability as compared with the TCF of SAW on PE samples without SiO/sub 2/ film.
机译:使用辛酸研究了具有二氧化硅(SiO / sub 2 /)薄膜层的质子交换(PE)z切割铌酸锂(LiNbO / sub 3 /)波导的表面声​​波(SAW)特性。通过二次离子质谱仪(SIMS)测量的氢分布呈阶梯状,假定与波导深度(d)相等。通过射频(rf)磁控管溅射将SiO / sub 2 /膜沉积在z形LiNbO / sub 3 /波导上。我们通过网络分析仪使用薄膜铝叉指式换能器电极在网络上分析了SAW器件设计的重要参数,例如相速度(V / sub p /),插入损耗(IL)和频率温度系数(TCF)。上SiO / sub 2 /膜表面。实验结果表明,SAW的V / sub p /随h / spl lambda /的增加而略有下降,其中h是SiO / sub 2 /膜的厚度,/ spl lambda /是波长。 SAW的IL随着h / spl lambda /的增加而增加。由SAW延迟线输出的频率变化计算出的SAW的TCF随着h // spl lambda /的增加而明显降低。在h // splλ/ = 0.08时,PE z-切割的LiNbO / sub 3 /的TCF经测量为约-54.72 ppm // spl℃/℃。结果表明,与无SiO / sub 2 /膜的PE样品上的SAW的TCF相比,SiO / sub 2 /膜可以补偿并改善温度稳定性。

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