Characteristics of Pure-shear Mode BAW Resonators Consisting of (1120) Textured ZnO Films

Yanagitani T.; Kiuchi M.; Matsukawa M.; Watanabe Y.

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Characteristics of Pure-shear Mode BAW Resonators Consisting of (1120) Textured ZnO Films

机译：（1120）织构的ZnO薄膜组成的纯剪切模式BAW谐振器的特性

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Thickness pure-shear mode film bulk acoustic wave resonators (PBARs) made of (112 macr0) textured ZnO films have been fabricated. We also have fabricated FBAR structure consisting of two layers of the (112 macr0) textured ZnO film with opposite polarizati

机译：已经制造了由（112 macr0）织构化ZnO薄膜制成的厚度纯剪切模式薄膜体声波谐振器（PBAR）。我们还制作了FBAR结构，该结构由两层（112 macr0）织构的ZnO膜组成，并具有相反的极化

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《IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control》 |2007年第8期|p.1680-1686|共7页
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Yanagitani T.; Kiuchi M.; Matsukawa M.; Watanabe Y.;
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中图分类声学工程;计量学;
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1. Shear mode electromechanical coupling coefficient k_(15) and crystallites alignment of (1120) textured ZnO films [J] . Takahiko Yanagitani, Masato Kiuchi, Mami Matsukawa, Journal of Applied Physics . 2007,第2期

机译：剪切模式机电耦合系数k_（15）和（1120）织构ZnO薄膜的微晶排列
2. The pure-shear mode solidly mounted resonator based on c-axis oriented ZnO film [J] . Da Chen, Jingjing Wang, Yan Xu, Applied Surface Science . 2010,第24期

机译：基于c轴取向ZnO薄膜的纯剪切模式固体谐振器
3. Characteristics of (101~0) and (112~0) textured ZnO piezofilms for a shear mode resonator in the VHF-UHF frequency ranges [J] . Yanagitani T., Nohara T., Matsukawa M., IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control . 2005,第11期

机译：在VHF-UHF频率范围内剪切模式谐振器的（101〜0）和（112〜0）织构的ZnO压电薄膜的特性
4. Pure-shear mode BAW resonator consisting of (112#x0304;0) textured AlN films [C] . IEEE Ultrasonics Symposium . 2008

机译：纯剪切模式BAW谐振器由（112˚0）纹理化ALN薄膜组成
5. RF-MEMS BAW resonators---Effective parameters modeling & characterization. [D] . Roy, Ambarish. 2011

机译：RF-MEMS BAW谐振器---有效参数建模与表征。
6. Growth of vertically aligned ZnO nanorods using textured ZnO films [O] . Francisco Solís-Pomar, Eduardo Martínez, Manuel F Meléndrez, 2011

机译：使用带纹理的ZnO薄膜生长垂直排列的ZnO纳米棒
7. Effect of sputtering geometry on (1120) textured ZnO piezofilm [O] . Yoshinori Miyamoto, Takahiko Yanagitani, Mami Matsukawa, 2006

机译：溅射几何形状对（1120）纹理ZnO piezofilm的影响
8. Dual Mode Thin Film Bulk Acoustic Resonators (FBARs) Based on AlN, ZnO and GaN Films with Tilted c-Axis Orientation [R] . Wang, Q. 2010

机译：基于具有倾斜c轴取向的alN，ZnO和GaN薄膜的双模薄膜体声波谐振器（FBaR）

Characteristics of Pure-shear Mode BAW Resonators Consisting of (1120) Textured ZnO Films

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