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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Polishing of Quartz by Rapid Etching in Ammonium Bifluoride
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Polishing of Quartz by Rapid Etching in Ammonium Bifluoride

机译:通过在双氟化铵中快速蚀刻来抛光石英

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摘要

The etch rate and surface roughness of polished and lapped AT-cut quartz subjected to hot (90, 110, and 130degC), concentrated (50, 65, 80 wt%) ammonium bifluoride have been investigated. Having used principal component analysis to verify experimental solidity and analyze data, we claim with confidence that this parameter space does not, as elsewhere stated, allow for a polishing effect or even a preserving setting. Etch rates were found to correlate well, and possibly logarithmically, with temperature except for the hottest etching applied to lapped material. Roughness as a function of temperature and concentration behaved well for the lapped material, but lacked systematic variation in the case of the polished material. At the lowest temperature, concentration had no effect on etch rate or roughness. Future efforts are targeted at temperatures and concentrations closer to the solubility limit.
机译:已经研究了在热(90、110和130℃),浓缩(50、65、80重量%)的氟化氢铵下经过抛光和研磨的AT切割石英的蚀刻速率和表面粗糙度。使用主成分分析来验证实验的可靠性并分析数据后,我们有信心声称,该参数空间(如其他地方所述)不允许抛光效果或保存设置。除了对研磨材料进行的最热蚀刻之外,发现蚀刻速率与温度具有很好的相关性,并且可能与温度呈对数关系。研磨后的材料的粗糙度随温度和浓度的变化表现良好,但抛光后的材料缺乏系统的变化。在最低温度下,浓度对蚀刻速率或粗糙度没有影响。未来的工作针对温度和浓度接近溶解度极限。

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