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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Electromechanical coupling coefficient k15 of polycrystalline ZnO films with the c-axes lie in the substrate plane
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Electromechanical coupling coefficient k15 of polycrystalline ZnO films with the c-axes lie in the substrate plane

机译:具有c轴的多晶ZnO薄膜的机电耦合系数k15位于衬底平面中

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摘要

The (112macr0) textured polycrystalline ZnO films with a high shear mode electromechanical coupling coefficient k15 are obtained by sputter deposition. An overmoded resonator, a layered structure of metal electrode film/(112macr0) textured ZnO piezoelectric film/metal electrode film/silica glass substrate was used to characterize k15 by a resonant spectrum method. The (112macr0) textured ZnO piezoelectric films with excellent crystallite c-axis alignment showed an electromechanical coupling coefficient k15 of 0.24. This value was 92% of k15 value in single-crystal (k15 = 0.26)
机译:通过溅射沉积获得具有高剪切模式机电耦合系数k15的(112macr0)织构的多晶ZnO膜。使用过模谐振器,金属电极膜/(112macr0)织构化的ZnO压电膜/金属电极膜/二氧化硅玻璃基板的层状结构通过共振光谱法表征k15。具有出色的微晶c轴对准性的(112macr0)织构化ZnO压电膜显示的机电耦合系数k15为0.24。该值是单晶中k15值的92%(k15 = 0.26)

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