Combination of e-Beam Lithography and of High Velocity AlN/Diamond-Layered Structure for SAW Filters in X Band

摘要

In this work, we report on the fabrication results of surface acoustic wave (SAW) devices operating at frequencies up to 8 GHz. In previous work, we have shown that high acoustic velocities (9 to 12 km/s) are obtained from the layered AIN/diamond structure. The interdigital transducers (IDT) made of aluminum with resolutions up to 250 nm were successfully patterned on AIN/diamond-layered structures with an adapted technological process. The uniformity and periodicity of IDT were confirmed by Held emission scanning electron microscopy and atomic force microscopy analyses. A highly oriented (002) piezoelectric aluminum nitride thin film was deposited on the nucleation side of the CVD diamond by magnetron sputtering technique. The X-ray diffraction effectuated on the AIN/diamond-layered structure exhibits high intensity peaks related to the (002) AlN and (111) diamond orientations. According to the calculated dispersion curves of velocity and the electromechanical coupling coefficient (K2), the AlN layer thickness was chosen in order to combine high velocity and high K2. Experimental data extracted from the fabricated SAW devices match with theoretical values quite well.