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Very high frequency (beyond 100 MHz) PZT kerfless linear arrays

机译:极高频率(超过100 MHz)的PZT无切口线性阵列

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This paper presents the design, fabrication, and measurements of very high frequency kerfless linear arrays prepared from PZT film and PZT bulk material. A 12-;C;m PZT thick film fabricated from PZT-5H powder/solution composite and a piece of 15-;C;m PZT-5H sheet were used to fabricate 32-element kerfless high-frequency linear arrays with photolithography. The PZT thick film was prepared by spin-coating of PZT sol-gel composite solution. The thin PZT-5H sheet sample was prepared by lapping a PZT-5H ceramic with a precision lapping machine. The measured results of the 2 arrays were compared. The PZT film array had a center frequency of 120 MHz, a bandwidth of 60% with a parylene matching layer, and an insertion loss of 41 dB. The PZT ceramic sheet array was found to have a center frequency of 128 MHz with a poorer bandwidth (40% with a parylene matching layer) but a better sensitivity (28 dB insertion loss).
机译:本文介绍了由PZT薄膜和PZT块状材料制备的非常高频率的无切口线性阵列的设计,制造和测量。使用由PZT-5H粉末/溶液复合材料制成的12-; C; m PZT厚膜和一块15-; C; m PZT-5H片材,用光刻法制造32个元素的无切口高频线性阵列。通过旋涂PZT溶胶-凝胶复合溶液制备PZT厚膜。通过使用精密研磨机研磨PZT-5H陶瓷来制备PZT-5H薄板样品。比较了两个阵列的测量结果。 PZT薄膜阵列的中心频率为120 MHz,具有聚对二甲苯匹配层的带宽为60%,插入损耗为41 dB。发现PZT陶瓷片阵列的中心频率为128 MHz,带宽较差(聚对二甲苯匹配层为40%),但灵敏度更高(插入损耗为28 dB)。

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