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Acoustic properties of the film/plate layered structure

机译:膜/板层状结构的声学特性

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A new propagation medium??a layered structure composed of a film and a plate??is suggested and studied, using c-oriented ZnO and AlN films on (001), {100}-Si plate, as two opposite examples of slow-on-fast and fast-on-slow material combinations. For both structures, the modes belonging to Lamb, quasi-longitudinal (QL), and Anisimkin Jr.?? (AN) families are found. For each family, the velocities vn, displacement profiles, and electromechanical coupling coefficients Kn 2 for 4 electrode configurations are numerically calculated by the matrix method as a function of the mode order n = 0 to 8, plate thickness H/;B; = 0 to 2.0, and film thickness h/;B; = 0.02 to 0.04 (H and h are thicknesses; ;B; is the wavelength). Some highorder modes in the structure have Kn 2 = 0 for any H/;B;, h/;B;, and electrode configuration. Other modes possess variable Kn 2 with a maximum value larger than the coupling coefficient for the Rayleigh SAWs in ZnO and AlN single crystals or layered structures using the same films and semi-infinite silicon substrate. There are also QL-modes having high velocity vn, large Kn 2, and low propagation loss caused by liquid loading. These modes are well suited for liquid sensors.
机译:提出并研究了一种新的传播介质-由膜和板组成的分层结构-使用(001){100} -Si板上的c取向ZnO和AlN膜作为慢速反应的两个相反的例子。快速和慢速的材料组合。对于这两种结构,模式均属于Lamb,准纵向(QL)和AnisimkinJr。 (AN)个家庭。对于每个族,通过矩阵方法根据模式阶数n = 0至8,板厚H /; B,通过矩阵方法来数值计算四种电极配置的速度vn,位移曲线和机电耦合系数Kn 2。 = 0至2.0,膜厚h /; B; = 0.02至0.04(H和h为厚度;; B为波长)。该结构中的某些高阶模态对于任何H /; B;,h /; B;和电极配置均具有Kn 2 = 0。其他模式具有可变的Kn 2,其最大值大于使用相同膜和半无限硅衬底的ZnO和AlN单晶或层状结构中瑞利声表面波的耦合系数。还存在QL模式,具有高速度vn,大Kn 2和由液体加载引起的低传播损耗。这些模式非常适合液体传感器。

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