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首页> 外文期刊>Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on >Field stability of piezoelectric shear properties in PIN-PMN-PT crystals under large drive field
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Field stability of piezoelectric shear properties in PIN-PMN-PT crystals under large drive field

机译:大驱动场下PIN-PMN-PT晶体压电剪切特性的场稳定性

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The coercive fields (EC) of Pb(In0.5Nb0.5)O3- Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) ternary single crystals were found to be 5 kV/cm, double the value of binary Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMNT) crystals, further increased to 6 to 9 kV/cm using Mn modifications. In addition to an increased EC, the acceptor modification resulted in the developed internal bias (Eint), on the order of ~1 kV/cm. The piezoelectric shear properties of unmodified and Mn-modified PIN-PMN-PT crystals with various domain configurations were investigated. The shear piezoelectric coefficients and electromechanical coupling factors for different domain configurations were found to be >2000 pC/N and >0.85, respectively, with slightly reduced properties observed in Mn-modified tetragonal crystals. Fatigue/cycling tests performed on shearmode samples as a function of ac drive field level demonstrated that the allowable ac field levels (the maximum applied ac field before the occurrence of depolarization) were only ~2 kV/cm for unmodified crystals, less than half of their coercive field. Allowable ac drive levels were on the order of 4 to 6 kV/cm for Mn-modified crystals with rhombohedral/orthorhombic phase, further increased to 5 to 8 kV/cm in tetragonal crystals, because of their higher coercive fields. It is of particular interest that the allowable ac drive field level for Mn-modified crystals was found to be ʧE;60% of their coercive fields, because of the developed Eint, induced by the acceptor-oxygen vacancy defect dipoles.
机译:发现Pb(In0.5Nb0.5)O3- Pb(Mg1 / 3Nb2 / 3)O3-PbTiO3(PIN-PMN-PT)三元单晶的矫顽场(EC)为5 kV / cm,是该值的两倍Mn修饰后,二元Pb(Mg1 / 3Nb2 / 3)O3-PbTiO3(PMNT)晶体的数量进一步增加到6至9 kV / cm。除了增加的EC外,受体修饰还导致内部偏压(Eint)升高,约为〜1 kV / cm。研究了具有不同畴结构的未改性和Mn改性的PIN-PMN-PT晶体的压电剪切性能。发现不同域构型的剪切压电系数和机电耦合系数分别为> 2000 pC / N和> 0.85,在Mn改性四方晶体中观察到的性能略有降低。对剪切模式样品进行的疲劳/循环测试是交流驱动场水平的函数,结果表明,未修饰晶体的允许交流场水平(发生去极化之前施加的最大交流场)仅为〜2 kV / cm,不到一半。他们的强制领域。对于具有菱面体/斜方晶相的Mn改性晶体,允许的交流驱动水平在4至6 kV / cm的数量级,在四方晶体中,由于其较高的矫顽场,其允许的交流驱动水平进一步提高到5至8 kV / cm。特别令人感兴趣的是,由于受主-氧空位缺陷偶极子引起的Eint的形成,发现Mn修饰晶体的允许交流驱动场能级为ʧE;其矫顽场的60%。

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