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首页> 外文期刊>Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on >Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O3-PZT thin films
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Highly polarized single-c-domain single-crystal Pb(Mn,Nb)O3-PZT thin films

机译:高极化单c畴单晶Pb(Mn,Nb)O 3 -PZT薄膜

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摘要

In-plane unstrained single-c-domain/single-crystal thin films of PZT-based ternary ferroelectric perovskite, xPb(Mn,Nb)O3-(1 - x)PZT, were grown on SrRuO3/Pt/MgO substrates using magnetron sputtering followed by quenching. The sputtered unstrained thin films exhibit unique ferroelectric properties: high coercive field, Ec >; 180 kV/cm, large remanent polarization, Pr = 100 μC/cm2, small relative dielectric constants, ε* = 100 to 150, high Curie temperature, Tc = ~600°C, and bulk-like large transverse piezoelectric constants, e31,f = -12.0 C/m2 for PZT(48/52) at x = 0.06. The unstrained thin films are an ideal structure to extract the bulk ferroelectric properties. Their micro-structures and ferroelectric properties are discussed in relation to the potential applications for piezoelectric MEMS.
机译:在SrRuO上生长基于PZT的三元铁电钙钛矿xPb(Mn,Nb)O 3 -(1-x)PZT的面内非应变单c畴/单晶薄膜使用磁控溅射接着淬火的 3 / Pt / MgO衬底。溅射的未应变薄膜表现出独特的铁电特性:高矫顽场,E c r = 100μC/ cm 2 ,相对介电常数小,ε* = 100至150,居里温度高,T < sub> c =〜600°C,对于PZT,块状大横向压电常数e 31,f = -12.0 C / m 2 48/52)在x = 0.06。非应变薄膜是提取整体铁电性能的理想结构。讨论了它们的微结构和铁电特性,以及它们与压电MEMS的潜在应用。

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