Quasi-planar monolithic integration of high-speed VCSEL and resonant enhanced photodetector arrays

摘要

We describe the quasi-planar monolithic integration of oxide-confined vertical-cavity surface-emitting laser (VCSEL) and resonant enhanced photodetector (REPD) arrays. These high speed devices are fabricated using an approach in which current apertures with a range of different sizes are formed by concatenating a number of discrete crescent shaped oxidation fronts. This approach preserves planarity while improving dimensional control for devices with very small oxide apertures (>4 /spl mu/m). It resulted in VCSEL's with electrical and optical characteristics that are comparable to those of etched-mesa devices, while producing high-speed REPD's with a rise time of /spl sim/65 ps.