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首页> 外文期刊>IEEE Microwave and Guided Wave Letters >Characteristics of valley microstrip lines for use in multilayer MMIC's
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Characteristics of valley microstrip lines for use in multilayer MMIC's

机译:用于多层MMIC的波谷微带线的特性

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摘要

A valley microstrip line fabricated by using multilayer monolithic microwave integrated circuit (MMIC) technologies is proposed, and its performance was investigated experimentally. Each transmission line was measured by using on-wafer probers and a HP8510 network analyzer. Four microstrip lines with dielectric overlay, whose polyimide layer thickness/strip conductor widths were 2.5 mu m/5 mu m, 5 mu m/10 mu m, 7.5 mu m/16 mu m, and 10 mu m/22 mu m were measured. Characteristic impedance of each line is 50 Omega . For the valley microstrip line, the polyimide layer thickness underneath varies from 3-10 mu m. With a strip conductor width of 6 mu m, the characteristic impedance is 50 Omega .
机译:提出了一种利用多层单片微波集成电路技术制造的谷底微带线,并对其性能进行了实验研究。通过使用晶圆上探测器和HP8510网络分析仪测量每条传输线。测量了四条带电介质覆盖层的微带线,其聚酰亚胺层的厚度/带状导体的宽度分别为2.5μm/5μm,5μm/10μm,7.5μm/16μm和10μm/22μm。 。每条线的特性阻抗为50Ω。对于谷底微带线,下面的聚酰亚胺层厚度为3-10μm。带状导体宽度为6μm时,特性阻抗为50Ω。

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