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Full-wave analyses of composite-metal multidielectric lossy microstrips

机译:复合金属多介质有损微带线的全波分析

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摘要

The full-wave mode-matching method is extended to analyze composite-metal multidielectric microstrips commonly used in monolithic microwave integrated circuits (MMICs). The theoretical data obtained by the present approach agree favorably with the available experimental data for GaAs-SiN-Ti-Au finite-width, composite-metal, and multidielectric microstrips. Specifically, the case of a microstrip line with composite-metal Ti-Au configuration on multidielectric GaAs-SiN layers, where ground plane conductor loss is also considered, is analyzed. The effect of the thickness of the Ti layer (t/sub 2/) on the dominant-mode complex propagation constant is plotted against a fixed-thickness SiN layer (d/sub 1/) of 2000 AA at 1 GHz and 70 GHz, and 50 GHz, respectively. The results of the total loss alpha computed using a simplified analysis technique are compared to results of the full-wave analysis. It is noted that as the frequency is increased to 50 GHz or even higher, the simplified analysis overestimates the total loss alpha because the currents on the edges of Ti and Au metal layers can no longer be neglected.
机译:全波模式匹配方法已扩展到分析单片微波集成电路(MMIC)中常用的复合金属多介质微带。通过本方法获得的理论数据与GaAs-SiN-Ti-Au有限宽度,复合金属和多介质微带的可用实验数据完全吻合。具体地,分析了在多电介质GaAs-SiN层上具有复合金属Ti-Au构造的微带线的情况,其中还考虑了接地平面的导体损耗。针对1 GHz和70 GHz时2000 AA的固定厚度SiN层(d / sub 1 /),绘制了Ti层厚度(t / sub 2 /)对主模复数传播常数的影响,和50 GHz。将使用简化分析技术计算出的总损耗α的结果与全波分析的结果进行比较。注意,随着频率增加到50 GHz甚至更高,简化的分析高估了总损耗α,因为不再可以忽略Ti和Au金属层边缘上的电流。

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