CMOS-compatible high-speed planar silicon photodiodes fabricated onSOI substrates

摘要

We report high-speed planar silicon p-i-n photodiodes fabricatednon silicon-on-insulator (SOI) substrates. The devices were fabricated innstandard CMOS technology with no additional fabrication steps required.nThe 250-nm finger-spacing devices exhibited 15- and 8-GHz bandwidths forndevices processed on 200- and 2000-nm SOI substrates, respectively, at anreverse bias of -9 V. Quantum efficiencies of 12% and 2% were measurednon the 2- and 0.2-Μm thick SOI, respectively. The dark current was 5npA for -3 V bias and 500 ΜA for -9 V bias