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机译:新型GaSb / AlSb / GaSb / AlSb / InAs / AlSb / InAs三势垒带间隧穿二极管
AT&T Bell Labs., Murray Hill, NJ, USA;
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; negative resistance effects; semiconductor junctions; tunnel diodes; GaSb-AlSb-GaSb-AlSb-InAs-AlSb-InAs; TBIT; electrons; heterojunctions; light holes; peak-current density; peak-to-valley-current ratio; quantisation effect; resonant tunnelling effects; room temperature; semiconductors; triple-barrier interband tunnelling diode;
机译:用于逻辑电路的InAs / AlSb / GaSb谐振带间隧穿二极管和Au-on-InAs / AlSb超晶格肖特基二极管
机译:非弹性散射对GaSb / AlSb / InAs / GaSb / AlSb / lnAs断裂间隙带间隧穿结构中带间隧穿的影响
机译:GaSb / AlSb / GaSb / AlSb / InAs双势垒带间隧穿结构中的阱影响和势垒厚度研究
机译:InAs层对GaSb / AlSb / GaSb / AlSb / InAs双势垒共振带间隧穿结构的负微分电阻行为的影响
机译:新型InAs / AlSb / GaSb共振带间隧穿结构的物理学。
机译:基于II型InAs / GaSb / AlSb超晶格的高性能偏置可选三色短波/中波/长波红外光电探测器
机译:通过Inas / Gasb / Inas和Inas / alsb / Gasb / alsb / Inas结构的动态电导
机译:质子照射Inas / alsb / Gasb谐振带间隧道二极管;杂志文章