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首页> 外文期刊>IEEE Electron Device Letters >Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory
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Demonstration of 3D Convolution Kernel Function Based on 8-Layer 3D Vertical Resistive Random Access Memory

机译:基于8层3D垂直电阻随机存取存储器的3D卷积内核功能的演示

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摘要

3D Convolutional Neural Networks (CNNs) has been widely used for medical image analysis such as magnetic resonance imaging (MRI) and video recognition due to their intrinsic 3D characteristics. This letter presents 3D convolution operations realized by an 8-layers 3D vertical resistive random access memory (VRRAM) under a field-programmable gate array (FPGA)-controlled relay-matrix based test platform. As an implementation, 3D Prewitt operators are used for edge surface detection of 3D version MNIST handwritten digits with ${16}imes {16}imes {16}$ pixels. The experimental results show that 3D convolution kernels can be correctly implemented on our in-house 3D VRRAM with higher parallelism than the conventional architecture. Besides, the proposed 3D VRRAM meets the demands of low power and high capacity for 3D CNN accelerator, paving the way of 3D VRRAM-based processing-in-memory (PIM) architecture for 3D CNNs.
机译:3D卷积神经网络(CNNS)已广泛用于医学图像分析,例如由于其固有的3D特征,诸如磁共振成像(MRI)和视频识别。这封信通过现场可编程门阵列(FPGA)基于中继矩阵的测试平台,提供了8层3D垂直电阻随机存取存储器(VRRAM)实现的3D卷积操作。作为实现,3D ProWitt运算符用于3D版本Mnist手写数字的边缘表面检测,其中$ {16} times {16} times {16} $像素。实验结果表明,在我们的内部3D VRRAM上可以正确地实现3D卷积内核,其具有比传统架构更高的并行性。此外,所提出的3D VRRAM满足3D CNN加速器的低功耗和高容量的需求,铺平了3D VRRAM的加工内存(PIM)架构3D CNNS的方式。

著录项

  • 来源
    《IEEE Electron Device Letters》 |2020年第3期|497-500|共4页
  • 作者单位

    Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Minist Ind & Informat Technol Elect Res Inst 5 Guangzhou 510610 Guangdong Peoples R China;

    Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Shenzhen Univ Coll Elect & Informat Engn Shenzhen 518060 Peoples R China;

    Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

    Chinese Acad Sci Key Lab Microelect Device & Integrated Technol Inst Microelect Beijing 100029 Peoples R China|Univ Chinese Acad Sci Beijing 100049 Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    3D convolutional neural network; 3D vertical resistive random access memory; processing-in-memory;

    机译:3D卷积神经网络;3D垂直电阻随机存取存储器;内存处理;

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