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Hydrothermal synthesis and morphology of Ga-bearing tourmaline

机译:含镓电气石的水热合成与形貌

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摘要

Ga-bearing tourmaline was originally synthesized in boron, boron-alkaline, and boron-fluorine hydrothermal solutions at a temperature of 600-650A degrees C and pressure of 100 MPa as crystals of spontaneous growth and on seeds. The maximal concentration of Ga2O3 in synthetic crystals reaches similar to 24.5 wt %. In addition to Ga-bearing tourmaline, Ga-bearing topaz crystallizes in boron-fluorine solution. Ga-bearing albite crystallizes in boron-alkaline solutions, whereas no additional phases are formed in pure boron solutions.
机译:含Ga的电气石最初是在硼,硼碱性和硼氟水热溶液中以自发生长的晶体和种子的形式在600-650A摄氏度和100 MPa的压力下合成的。合成晶体中Ga2O3的最大浓度达到24.5 wt%。除含Ga的电气石外,含Ga的黄玉在硼氟溶液中结晶。含镓的钠长石在硼碱性溶液中结晶,而在纯硼溶液中没有形成其他相。

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  • 来源
    《Doklady Earth Sciences》 |2017年第2期|419-422|共4页
  • 作者单位

    Russian Acad Sci, Inst Expt Mineral, Chernogolovka, Moscow Oblast, Russia;

    Russian Acad Sci, Inst Expt Mineral, Chernogolovka, Moscow Oblast, Russia;

    St Petersburg State Univ, St Petersburg, Russia;

    Russian Acad Sci, Inst Expt Mineral, Chernogolovka, Moscow Oblast, Russia;

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