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Theoretical Model of Diffraction Line Profiles as Combinations of Gaussian and Cauchy Distributions

机译:高斯和柯西分布相结合的衍射线轮廓的理论模型

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Previously we derived equations determining line broadening in ax-ray diffraction profile due to stacking faults. Here, we will consider line broadening due to particle size and strain which are the other factors affecting line broadening in a diffraction profile. When line broadening in a diffraction profile is due to particle size and strain, the theoretical model of the sample under study is either a Gaussian or a Cauchy function or a combination of these functions, e.g. Voigt and Pseudovoigt functions. Although the overall nature of these functions can be determined by Mitra’s R(x) test and the Pearson and Hartley x?test, details of a predicted model will be lacking. Development of a mathematical model to predict various parameters before embarking upon the actual experiment would enable correction of significant sources of error prior to calculations. Therefore, in this study, predictors of integral width, Fourier Transform, Second and Fourth Moment and Fourth Cumulant of samples represented by Gauss, Cauchy, Voigt and Pseudovoigt functions have been worked out. An additional parameter, the coefficient of excess, which is the ratio of the Fourth Moment to three times the square of the Second Moment, has been proposed. For a Gaussian profile the coefficient of excess is one, whereas for Cauchy distributions, it is a function of the lattice variable. This parameter can also be used for determining the type of distribution present in aggregates of distorted crystallites. Programs used to define the crystal structure of materials need to take this parameter into consideration.
机译:以前,我们推导了用于确定由于堆垛层错而引起的线宽在A射线衍射图中变宽的方程。在这里,我们将考虑由于粒径和应变而引起的线展宽,这是影响衍射图中线展宽的其他因素。当衍射图谱中的谱线展宽是由于粒径和应变引起的时,所研究样品的理论模型是高斯函数或柯西函数或这些函数的组合,例如Voigt和Pseudovoigt函数。尽管这些功能的整体性质可以通过Mitra的R(x)检验以及Pearson和Hartley x?test来确定,但仍缺少预测模型的细节。开发数学模型以在开始实际实验之前预测各种参数将能够在计算之前校正重要的误差源。因此,在这项研究中,已经计算出了以高斯,柯西,沃伊特和伪沃伊格函数表示的样本的积分宽度,傅立叶变换,第二和第四矩以及第四累积量的预测因子。已经提出了额外的参数,即过剩系数,该系数是第四矩与第二矩平方的三倍之比。对于高斯分布,超额系数是1,而对于柯西分布,它是晶格变量的函数。该参数还可用于确定扭曲的微晶聚集体中存在的分布类型。用于定义材料晶体结构的程序需要考虑此参数。

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