Graphene Transistor

摘要

This review on graphene, a one-atom thick, two-dimensional sheet of carbon atoms, starts with a general description of the graphene electronic structure. The winning quality of graphene is a unique nature of charge carriers in graphene. Its charge carriers mimic relativistic particles and are easier and more natural to describe starting with the Dirac equation rather than the Schrodinger equation. This determines a number of unique phenomena observed in graphene, ranging from the absence of localization to new type of quantum Hall Effect (QHE). These exceptional properties make graphene a promising candidate for future electronic devices such as ballistic and single electron transistors, and spin-valve and ultra-sensitive gas sensors. The graphene transistor could play a role in post CMOS devices that are expected to be able to compute at much faster speeds than today’s devices. Consequently, we explore the characteristics of graphene quantum dots, graphene field effect transistor for rf-applications, field emission from graphene nanoribbons transistor. Also, applications of graphene in the field of optoelectronics are explored in this review. Graphene may be promising for thermoelectric applications.